Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

Author

Blood, Peter ; Colak, Sel ; Kucharska, Alicia I.

Author_Institution

Philips Res. Labs., Redhill, UK

Volume

24

Issue

8

fYear

1988

Firstpage

1593

Lastpage

1604

Abstract

Gain spectra and gain-current relations are calculated for GaAs-AlGaAs quantum-well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transition broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum-well lasers.<>

Keywords

aluminium compounds; energy gap; gallium arsenide; semiconductor junction lasers; spectral line breadth; GaAs-AlGaAs quantum well lasers; III-V semiconductors; bandgap narrowing; broadening; carrier-density-dependent intraband scattering process; density of states function; gain spectra; gain-current relations; high-injection effects; many-body effects; spontaneous emission spectra; well width fluctuations; Blood; Excitons; Laboratories; Laser modes; Laser transitions; Photonic band gap; Predictive models; Quantum well lasers; Spontaneous emission; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.7090

Filename

7090