DocumentCode :
1418307
Title :
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory
Author :
Ma, Huan-Chi ; Chou, You-Liang ; Chiu, Jung-Piao ; Chung, Yueh-Ting ; Lin, Tung-Yang ; Wang, Tahui ; Chao, Yuan-Peng ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution :
Dept. of Electron. Eng. & the Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
623
Lastpage :
630
Abstract :
A novel random telegraph signal (RTS) method is proposed to characterize the lateral distribution of injected charge in program and erase states in a nor-type silicon-oxide-nitride-oxide-silicon Flash memory. The concept of this method is to use RTS to extract an oxide trap position in the channel and then to use the trap and RTS as internal probe to detect a local channel potential change resulting from injected charge during program/erase. By using this method, the lateral width of the injected charge-induced channel potential barrier is shown to be around 20 nm in channel hot electron (CHE) program. Our method also confirms that Channel Initiated Secondary ELectron (CHISEL) program has a broader injected charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band tunneling erase holes is observed. Program-state retention loss models, charge vertical loss versus lateral migration, are reexamined by using this method. The polarity of a program-state charge distribution along the channel is explored within 10-20 program/erase cycles. Nitride charge vertical loss is verified by this method.
Keywords :
flash memories; hot carriers; telegraphy; SONOS flash memory; band-to-band tunneling erase hole; channel hot electron program; channel initiated secondary electron program; charge vertical loss versus lateral migration; charge-induced channel potential barrier; nitride charge vertical loss; oxide trap position; program-state charge distribution; program-state retention loss model; program/erase charge lateral spread; random telegraph signal method; silicon-oxide-nitride-oxide-silicon Flash memory; Charge lateral distribution; random telegraph signal (RTS); retention loss; silicon–oxide–nitride–oxide–silicon (SONOS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2098410
Filename :
5680603
Link To Document :
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