Title :
Investigation into performance of TaN diffusion barrier against copper diffusion using XRD
Author_Institution :
Singapore-Massachusetts Inst. of Technol., Singapore
fDate :
12/7/2000 12:00:00 AM
Abstract :
A study of the reliability of a multilayer ionised metal plasma Cu/IMP TaN/plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30 nm) is presented. Formation of Cu5Ta11O30 and CuTa10 O26 peaks in the X-ray diffraction analysis when TaN fails suggests diffusion of Cu into oxygen-gettered tantalum. A 30 nm TaN barrier is an effective barrier for the Cu diffusion, sustaining 800°C annealing
Keywords :
VLSI; X-ray diffraction; annealing; copper; diffusion barriers; integrated circuit metallisation; integrated circuit reliability; plasma CVD coatings; silicon; silicon compounds; tantalum compounds; 10 to 30 nm; 800 degC; Cu-TaN-SiO2-Si; IC interconnections; IC metallisation; XRD; annealing; deep-submicron ICs; diffusion barrier; ionised metal plasma; plasma enhanced chemical vapour deposition; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001466
