DocumentCode :
1419795
Title :
In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance
Author :
Lim, Moo-Sup ; Park, Cheol-Min ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
48
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
161
Lastpage :
165
Abstract :
We have fabricated a new lateral field emitter array, in-situ vacuum-sealed, which exhibits a low turn on voltage and a high transconductance value without any additional vacuum sealing process. The vacuum-sealed lateral FEA (VLFEA) is encapsulated during the fabrication process, so that field emission characteristics can be measured without any additional vacuum environments. Experimental current-voltage (I-V) characteristics show that the anode current is field emission current obeying the linearity of the Fowler-Nordheim (F-N) plot. The experimental turn-on voltage of about 9 V is in good agreement with the extracted one from the F-N plot. In order to verify the integrity of the vacuum sealed micro-cavity, we have measured the anode current of the VLFEA both in a high vacuum chamber and in an atmospheric environment and found that the structure is well sealed. The anode currents as a function of gate voltage of the Mo-sealed VLFEA are analyzed and transconductance is extracted. The experimental results show that the VLFEA has superior field emission characteristics, such as low turn-on voltage and high transconductance, and does not require any additional troublesome vacuum sealing
Keywords :
electron field emission; encapsulation; seals (stoppers); vacuum microelectronics; 1 muA; 1.7 muS; 9 V; Fowler-Nordheim plot linearity; I-V characteristics; Mo-sealed VLFEA; Si; Si-SiO2-Mo; anode current; atmospheric environment; encapsulation; field emission characteristics; field emission current; high transconductance; high vacuum chamber; in-situ vacuum-sealed lateral FEAs; lateral field emitter array; low turn-on voltage; vacuum sealed micro-cavity integrity; Anodes; Atmospheric measurements; Current measurement; Encapsulation; Fabrication; Field emitter arrays; Flat panel displays; Insulation; Low voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.892184
Filename :
892184
Link To Document :
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