• DocumentCode
    1419795
  • Title

    In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance

  • Author

    Lim, Moo-Sup ; Park, Cheol-Min ; Han, Min-Koo ; Choi, Yearn-Ik

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    48
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    161
  • Lastpage
    165
  • Abstract
    We have fabricated a new lateral field emitter array, in-situ vacuum-sealed, which exhibits a low turn on voltage and a high transconductance value without any additional vacuum sealing process. The vacuum-sealed lateral FEA (VLFEA) is encapsulated during the fabrication process, so that field emission characteristics can be measured without any additional vacuum environments. Experimental current-voltage (I-V) characteristics show that the anode current is field emission current obeying the linearity of the Fowler-Nordheim (F-N) plot. The experimental turn-on voltage of about 9 V is in good agreement with the extracted one from the F-N plot. In order to verify the integrity of the vacuum sealed micro-cavity, we have measured the anode current of the VLFEA both in a high vacuum chamber and in an atmospheric environment and found that the structure is well sealed. The anode currents as a function of gate voltage of the Mo-sealed VLFEA are analyzed and transconductance is extracted. The experimental results show that the VLFEA has superior field emission characteristics, such as low turn-on voltage and high transconductance, and does not require any additional troublesome vacuum sealing
  • Keywords
    electron field emission; encapsulation; seals (stoppers); vacuum microelectronics; 1 muA; 1.7 muS; 9 V; Fowler-Nordheim plot linearity; I-V characteristics; Mo-sealed VLFEA; Si; Si-SiO2-Mo; anode current; atmospheric environment; encapsulation; field emission characteristics; field emission current; high transconductance; high vacuum chamber; in-situ vacuum-sealed lateral FEAs; lateral field emitter array; low turn-on voltage; vacuum sealed micro-cavity integrity; Anodes; Atmospheric measurements; Current measurement; Encapsulation; Fabrication; Field emitter arrays; Flat panel displays; Insulation; Low voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.892184
  • Filename
    892184