Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Author

Yen, Shun Tung ; Lee, Chien-Ping

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1644

Lastpage

1651

Abstract

We theoretically analyze 630-nm band GaInP-AlGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current. As a result, the threshold current is reduced and the emission wavelength is shortened for multiquantum-well (MQW) lasers by n-type doping. But for single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; laser transitions; leakage currents; quantum well lasers; semiconductor device models; semiconductor doping; 630 nm; 630-nm band GaInP-AlGaInP tensile-strained quantum-well laser active region doping; GaInP-AlGaInP; MQW lasers; QW lasers; SQW lasers; emission wavelength; leakage current; n-type doping; radiative current; single-quantum-well lasers; threshold current; Doping; Laser modes; Laser theory; Laser transitions; Leakage current; Quantum well devices; Quantum well lasers; Quantum wells; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.709580

Filename

709580