Ohmic Contact to n-Type Ge With Compositional W Nitride

Author

Huan Da Wu ; Chen Wang ; Jiang Bin Wei ; Wei Huang ; Cheng Li ; Hong Kai Lai ; Jun Li ; Chunli Liu ; Song Yan Chen

Author_Institution

Dept. of Phys., Xiamen Univ., Xiamen, China

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1188

Lastpage

1190

Abstract

By varying composition of the WN_x film electrode, modulation of the Schottky barrier height (SBH) of WN_x/n-Ge contacts was demonstrated. The effective SBH decreased from 0.52 eV for W/n-Ge contact to 0.47, 0.42, and 0.39 eV for WN_x/n-Ge contacts with various nitrogen x components, which were 0.06, 0.09, and 0.15, respectively. Ohmic contact property was achieved when the nitrogen component in WN_x reached x = 0.19. As an explanation, an electrical potential caused by the N-Ge dipoles layer across the WN_x/n-Ge contact interface is proposed to alleviate the Fermi-level pinning effect.

Keywords

Schottky barriers; electric potential; ohmic contacts; tungsten; Fermi-level pinning effect; Ge; Ohmic contact; Schottky barrier height; W; electrical potential; electron volt energy 0.39 eV; electron volt energy 0.42 eV; electron volt energy 0.47 eV; electron volt energy 0.52 eV; film electrode; ohmic contact; Conductivity; Films; Germanium; Nitrogen; Ohmic contacts; Schottky barriers; Tungsten; Fermi-level pinning; Germanium; Metal nitride; Ohmic contact; Schottky barrier; germanium; metal nitride; ohmic contact;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2365186

Filename

6937144