Title :
Temperature dependent characterization of bipolar silicon power semiconductors-a new physical model validated by device-internal probing between 400-100 K
Author :
Schlögl, Andreas E. ; Mnatsakanov, Tigran T. ; Kuhn, Harald ; Schroder, Dierk
Author_Institution :
Infineon Technol. AG, Munich, Germany
fDate :
11/1/2000 12:00:00 AM
Abstract :
A new physical model for characterizing the temperature dependent operation of power semiconductor devices for network simulation purposes is presented. It is based on the application of a new continuity equation for describing the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly concerning electron hole scattering (EHS) are strictly taken into account even as temperature conditioned effective ionization of doping atoms. The model is validated by free carrier absorption (FCA) experiments at temperatures between 400-100 K. It could be shown that models based on standard continuity equations and standard mobility expressions are principally inconsistent
Keywords :
carrier density; carrier mobility; elemental semiconductors; ionisation; power semiconductor devices; semiconductor device models; silicon; thermal analysis; Si; bipolar silicon power semiconductors; carrier mobility description; carrier transport; continuity equation; doping atoms; electron hole scattering; free carrier absorption; internal probing; low doped layer; network simulation; physical model; power semiconductor structures; standard continuity equations; standard mobility expressions; temperature conditioned effective ionization; temperature dependent characterization; temperature dependent operation; Charge carrier processes; Electron mobility; Equations; Ionization; Power semiconductor devices; Scattering; Semiconductor device doping; Semiconductor process modeling; Silicon; Temperature dependence;
Journal_Title :
Power Electronics, IEEE Transactions on
