100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

Author

Takayama, Tom ; Imafuji, Osamu ; Kouchi, Yasuyuki ; Yuri, Masaaki ; Yoshikawa, Akio ; Itoh, Kunio

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

32

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1981

Lastpage

1987

Abstract

We have developed 100-mW high-power angled-stripe superluminescent diodes with a new angled-stripe real refractive-index guided self-aligned structure. The structure has a GaAlAs optical confinement layer on a planar active layer and an inclined current injection stripe by 5° with respect to the facet normal. The structure gives small internal loss (~10 cm^-1) and facet power reflectivity less than the order of 10^-6. As a result, the output power as high as 105 mW at a low operating current of 270 mA is obtained with less than 3% spectral modulation and 10.5 nm full width at half maximum (FWHM) spectral width

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical losses; reflectivity; refractive index; superluminescent diodes; 100 mW; 105 mW; 270 mA; FWHM; GaAlAs; GaAlAs optical confinement layer; facet normal; facet power reflectivity; full width at half maximum spectral width; high-power angled-stripe superluminescent diodes; inclined current injection stripe; low operating current; output power; planar active layer; real refractive-index-guided self-aligned structure; small internal loss; spectral modulation; Optical losses; Optical modulation; Optical refraction; Optical saturation; Optical sensors; Optical variables control; Optical waveguides; Power generation; Reflectivity; Superluminescent diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.541685

Filename

541685