Title :
Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting
Author :
Jang, Jaejune ; Kan, Edwin C. ; Arnborg, Torkel ; Johansson, Ted ; Dutton, Robert W.
Author_Institution :
Stanford Univ., CA, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base finger is implemented using a depletion-mode FET, which requires only minor modification in the fabrication process. Mixed-mode simulation, instead of analytical equations, is used for more accurate device characterization
Keywords :
UHF bipolar transistors; equivalent circuits; power bipolar transistors; semiconductor device models; thermal stability; RF power BJT; ballast resistor; depletion-mode FET; device characterization; interdigitated power bipolar transistors; mixed-mode simulation; nonlinear base ballasting; thermal stability; Analytical models; Bipolar transistors; Electronic ballasts; FETs; Fabrication; Fingers; Nonlinear equations; Radio frequency; Resistors; Thermal stability;
Journal_Title :
Solid-State Circuits, IEEE Journal of
