20-Gb/s 850-nm Oxide VCSEL Operating at 25 $^{\\circ}$ C–70 $^{\\circ}$ C

Author

Ji, Chen ; Wang, Jingyi ; Söderström, David ; Giovane, Laura

Author_Institution

Fiber Opt. Product Div., Avago Technol., San Jose, CA, USA

Volume

22

Issue

10

fYear

2010

fDate

5/15/2010 12:00:00 AM

Firstpage

670

Lastpage

672

Abstract

We report a small aperture 850-nm oxide vertical-cavity surface-emitting laser (VCSEL) operating at 20 Gb/s (pseudorandom bit sequence 31) 25??C-70??C with 5 dB extinction ratio. The VCSEL is designed to target anticipated 20-Gb/s transceiver module requirements, and is fabricated using production equipment including metal-organic chemical vapor deposition reactors for the growth of GaAs-AlGaAs epitaxy. We have characterized small signal modulation response properties in detail and obtained good agreement with finite element VCSEL simulation results. Preliminary accelerated lifetime testing indicated that the wear out lifetime would exceed 10 years for 70??C operations.

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; epitaxial growth; gallium arsenide; life testing; surface emitting lasers; GaAs-AlGaAs; accelerated lifetime testing; bit rate 20 Gbit/s; epitaxial growth; metal organic chemical vapor deposition; oxide vertical cavity surface emitting laser; size 850 nm; small signal modulation; temperature 25 C to 70 C; 20-Gb/s eye diagram; 850-nm oxide vertical-cavity surface-emitting laser (VCSEL); finite-element simulation; long-term reliability; small signal modulation; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2043667

Filename

5419040

20-Gb/s 850-nm Oxide VCSEL Operating at 25 C–70 C

Ji, Chen ; Wang, Jingyi ; Söderström, David ; Giovane, Laura

jour

20-Gb/s 850-nm Oxide VCSEL Operating at 25 $^{\\circ}$ C–70 $^{\\circ}$ C