Title :
100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With
Author :
Sun, Haifeng ; Alt, Andreas R. ; Benedickter, Hansruedi ; Feltin, Eric ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Bolognesi, C.R.
Author_Institution :
Electromagn. Fields & Microwave Electron. Lab., ETH Zurich, Zurich, Switzerland
fDate :
4/1/2010 12:00:00 AM
Abstract :
One-hundred-nanometer-gate (Al,In)N/GaN high-electron-mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at VGS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequency as high as fT = 144 GHz, which is the highest so far reported for any (Al,In)N/GaN-based HEMT. This fT matches the best published values that we could find for 100-nm-gate (Al,Ga)N/GaN HEMTs, thus closing the cutoff frequency gap between (Al,In)N/GaN and (Al,Ga)N/GaN HEMTs. Additionally, similar devices grown on (111) high-resistivity silicon show a peak fT of 113 GHz, also setting a new performance benchmark for (Al,In)N/GaN HEMTs on silicon. Our findings indicate significant performance advantages for (Al,In)N/GaN HEMTs fabricated on SiC substrates. The improved performance for devices grown on SiC is derived from the superior transport properties of (Al,In)N/GaN 2DEGs grown on that substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; silicon compounds; wide band gap semiconductors; (111) high-resistivity silicon; AlInN-GaN; HEMT; SiC; current density; extrinsic transconductance; frequency 113 GHz; frequency 144 GHz; high-electron-mobility transistors; peak current gain cutoff frequency; performance benchmark; size 100 nm; AlInN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2039845