Title :
Room-temperature low-threshold type-II quantum-well lasers at 4.5 μm
Author :
Chih-Hsiang Lin ; Rui Q.Yang ; Murry, S.J. ; Pei, S.S. ; Chi Yan ; McDaniel, D.L., Jr. ; Falcon, M.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
We report optically pumped InAs-InGaSb-InAs-AlSb type-II quantum-well lasers at 3.84-4.48 μm. Lasing was observed at temperatures up to 300 K with a characteristic temperature T0 of 61.6 K. The average absorbed threshold power was only 0.7 mW at 220 K, and 2.7 mW at 300 K with a pulselength of 650 ns and a repetition rate of 2 kHz. At 49 K, the continuous-wave (CW) output power was 4.2 mW/facet with an absorbed threshold pump power of 31.5 mW and an absorbed pump power of 62 mW, indicating a differential quantum efficiency of 54% for two facets.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser variables measurement; optical pumping; quantum well lasers; 0.7 mW; 2 kHz; 2.7 mW; 220 K; 3.84 to 4.48 mum; 300 K; 31.5 mW; 4.5 mum; 49 K; 61.6 K; 62 mW; 650 ns; InAs-InGaSb-InAs-AlSb; absorbed pump power; absorbed threshold pump power; average absorbed threshold power; characteristic temperature; continuous-wave output power; differential quantum efficiency; lasing; optically pumped laser; pulselength; quantum-well lasers; repetition rate; room-temperature low-threshold laser; type-II quantum-well lasers; Chemical lasers; Epitaxial growth; Laser excitation; Optical materials; Optical pumping; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
