Title :
Microwave frequency operation of the heterostructure hot-electron diode
Author :
Kolodzey, J. ; Laskar, J. ; Higman, T.K. ; Emanuel, M.A. ; Coleman, James J. ; Hess, Karl
Author_Institution :
Illinois Univ., Urbana, IL, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
The generation of microwave frequencies by the heterostructure hot-electron diode (H/sup 2/ED) is discussed. At 77 K, self-oscillation has been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.<>
Keywords :
microwave generation; semiconductor device models; semiconductor diodes; solid-state microwave devices; 0 to 10.5 GHz; 77 K; H/sup 2/ED; bias polarity required; broad frequency range; generation of microwave frequencies; heterostructure hot-electron diode; model; parasitic capacitance; parasitic series resistance; self-oscillation; thermionic emission; tunneling; Electromagnetic heating; Electrons; Frequency; Gallium arsenide; HEMTs; Microwave devices; Semiconductor diodes; Thermionic emission; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
