DocumentCode :
1426339
Title :
Bulk ZnO: Current Status, Challenges, and Prospects
Author :
Avrutin, Vitaliy ; Cantwell, Gene ; Zhang, Jizhi ; Song, J.J. ; Silversmith, Donald J. ; Morkoç, Hadis
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Volume :
98
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
1339
Lastpage :
1350
Abstract :
Rediscovered in the last decade, zinc oxide (ZnO) shows a great potential for many optoelectronics and to some extent microelectronics applications. However, a clear majority of effort expended in this fast developing field has been limited to heteroepitaxial structures grown on foreign substrates with lattice-parameter and thermal-expansion mismatch with ZnO which is detrimental. Recognizing the importance, the effort has shifted to include developing technologies capable of producing freestanding ZnO wafers in large-scale for ZnO based device applications, which is the subject matter of this manuscript. Three competing approaches - hydrothermal method, melt growth (modifications of the well known Bridgman technique), and seeded vapor transport growth - have now reached or are approaching commercial viability. In this article, we discuss the progress, outstanding problems, and prospects of these growth methods employed for commercial manufacturing of ZnO wafers.
Keywords :
integrated optoelectronics; optoelectronic devices; thermal expansion; zinc compounds; Bridgman technique; ZnO; foreign substrates; heteroepitaxial structures; lattice-parameters; microelectronics applications; optoelectronics; thermal-expansion mismatch; vapor transport growth; zinc oxide; Chemical industry; Crystals; Gallium nitride; Large-scale systems; Manufacturing; Mass production; Microelectronics; Mineralization; Optoelectronic devices; Senior members; Substrates; Zinc oxide; Bridgman method; hydrothermal method; single crystals; vapor transport; zinc oxide;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2010.2040363
Filename :
5420044
Link To Document :
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