DocumentCode :
1426395
Title :
 characteristics by a comparison of experiments with simulations using a Schrodinger-Poisson solver. Using a transmission-line network, the channel response and the density of interface states can be accurately modeled from the conductance-frequency characteristics. This technique is applied to HfO<sub>2</sub>/SiO<sub>2</sub> dielectric MOSFETs with polysilicon and poly/TiN metal gates deposited and annealed at identical temperature. In such a condition, the density of interface states is twice as large as for a TiN metal gate.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; capacitance measurement; electric admittance measurement; frequency measurement; hafnium compounds; titanium compounds; transmission line theory; TiN-HfO<sub>2</sub>; conductance frequency measurements; density of interface states; nMOSFET; small signal capacitance measurements; transmission line model; weak inversion; Capacitance; Frequency measurement; Interface states; Logic gates; Resistance; Tin; Channel resistance; conductance; high- <formula formulatype=){kind=spacer}
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2179657
Filename :
6135493
Link To Document :
