Title :
Output power saturation characteristics of the CW-operated semiconductor Raman laser
Author :
Suto, K. ; Kimura, T. ; Saito, T.
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
fDate :
8/1/1998 12:00:00 AM
Abstract :
The intensity noise of a CW-operated semiconductor Raman laser waveguide structure with AlxGa1-xP cladding layers has been measured and it has been found that the noise spectral intensity in the frequency range 10 Hz-100 kHz was reduced to 34 dB below that of the incident pump light under saturation conditions. This effect has been interpreted as coupling between the pump light, the first Stokes light and the second Stokes light, assuming a very small contribution of nonlinear absorption
Keywords :
III-V semiconductors; Raman lasers; gallium compounds; laser noise; optical pumping; optical saturation; semiconductor lasers; waveguide lasers; 10 Hz to 100 kHz; AlxGa1-xP cladding layers; AlGaP; CW-operated semiconductor Raman laser; CW-operated semiconductor Raman laser waveguide structure; GaP; first Stokes light; frequency range; incident pump light; intensity noise; noise spectral intensity; nonlinear absorption; output power saturation characteristics; pump light; saturation conditions; second Stokes light; waveguide lasers;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19982146
