An analysis of flicker noise rejection in low-power and low-voltage CMOS mixers

Author

Melly, Thierry ; Porret, Alain-Serge ; Enz, Christian C. ; Vittoz, Eric A.

Author_Institution

Electron. Lab., Swiss Federal Inst. of Technol., Lausanne, Switzerland

Volume

36

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

102

Lastpage

109

Abstract

The sensitivity of RF CMOS receivers using a direct conversion or a low-IF architecture is strongly affected by flicker noise. This paper gives theoretical guidelines to predict the flicker noise in Gilbert-cell mixers. The conversion gain, the equivalent input and output noise, and the effect of the pole at the single internal RF node are discussed. For the first time, results which are valid in all modes of operation are given. Such complete results are required for some ultra low-power and low-voltage applications, since the transistors might be operated in moderate or even weak inversion region. The theoretical gains are found to remain within a 2-dB margin with respect to the measurements of a UHF downconverter built in a 0.5 μm process, for a large range of bias conditions and local oscillator swing

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF mixers; flicker noise; integrated circuit noise; low-power electronics; radio receivers; 0.5 micron; Gilbert cell mixer; RF CMOS receiver; UHF downconverter; conversion gain; direct conversion architecture; equivalent input noise; equivalent output noise; flicker noise rejection; low-IF architecture; low-power circuit; low-voltage circuit; pole; 1f noise; Baseband; CMOS technology; Circuits; Degradation; Energy consumption; Laboratories; Local oscillators; Radio frequency; Receivers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.896234

Filename

896234