Title :
High-speed low-parasitic low-divergence 635 nm singlemode lasers
Author :
Lu, BO ; Vail, E. ; Osinski, J.S. ; Schmitt, B.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
9/3/1998 12:00:00 AM
Abstract :
Low-parasitic ridge waveguide 635 nm low-divergence singlemode lasers have been fabricated with isolation etching though a quantum well region and p-contact lift-off process to reduce the junction capacitance. An electrical modulation speed of up to 2.7 GHz has been achieved at 20°C and of 1.4 GHz at 50°C
Keywords :
etching; laser modes; quantum well lasers; ridge waveguides; waveguide lasers; 1.4 GHz; 2.7 GHz; 20 degC; 50 degC; 635 nm; electrical modulation speed; isolation etching; junction capacitance; low-parasitic ridge waveguide; p-contact lift-off process; quantum well lasers; quantum well region; singlemode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981211
