Title :
Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors
Author :
Qasaimeh, O. ; Weidong Zhou ; Bhattacharya, Pallab ; Huffaker, D. ; Deppe, D.
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A low power GaAs-based monolithically integrated phototransceiver, consisting of a high gain phototransistor and a microcavity light-emitting diode, is demonstrated. The input and output wavelengths are 0.85 and 0.98 μm, respectively. The phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 μW for an input power of 1.5 μW. The small signal modulation bandwidth is 80 MHz.
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; micro-optics; optical modulation; optical receivers; phototransistors; 0.85 mum; 0.98 mum; 1.5 muW; 400 muW; 7 dB; 80 MHz; GaAs; high gain phototransistor; input power; low power GaAs-based monolithically integrated phototransceiver; low-power phototransceiver; microcavity LEDs; microcavity light-emitting diode; monolithically integrated; multiquantum-well phototransistors; optical gain; output wavelengths; phototransceiver; power dissipation; small signal modulation bandwidth; Bandwidth; Light emitting diodes; Microcavities; Optical arrays; Optical modulation; Optical sensors; Phototransistors; Power dissipation; Stimulated emission; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
