Title :
SiGe retiming high-gain power MUX for directly driving an EAM up to 50 Gbit/s
Author :
Moller, M. ; Meister, T.F. ; Schmid, R. ; Rupeter, J. ; Rest, M. ; Schopflin, A. ; Rein, H.M.
Author_Institution :
AB Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
fDate :
9/3/1998 12:00:00 AM
Abstract :
An SiGe 2:1 time-division multiplexer (MUX) with high output power was developed for directly driving an electroabsorption modulator (EAM) in a 40 Gbit/s optical fibre link. The essential advantages compared to usual driver circuit concepts are discussed and experimentally demonstrated. Measurements on mounted chips show clear output eye diagrams at 40 and 50 Gbit/s with voltage swings of 2.5 and 2 Vpp, respectively
Keywords :
Ge-Si alloys; 2 V; 2.5 V; 40 Gbit/s; 50 Gbit/s; SiGe; SiGe IC; SiGe time-division multiplexer; electroabsorption modulator driver circuit; optical fibre link; retiming high-gain power MUX;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981247
