• DocumentCode
    1429
  • Title

    Absorption voltages and insulation resistance in ceramic capacitors with cracks

  • Author

    Teverovsky, Alexander

  • Author_Institution
    ASRC Space & Defence, NASA/GSFC, Greenbelt, MD, USA
  • Volume
    21
  • Issue
    5
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2020
  • Lastpage
    2027
  • Abstract
    Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.
  • Keywords
    absorption; ceramic capacitors; cracks; electric resistance; equivalent circuits; insulation; leakage currents; thermal shock; Dow equivalent circuit; crack-related leakage currents; dielectric absorption voltages; insulation resistance; low-voltage X5R ceramic capacitors; low-voltage X7R ceramic capacitors; mechanical defects; polarization; thermal shock; Absorption; Capacitance; Capacitors; Insulation; Mathematical model; Resistance; Voltage measurement; Ceramic capacitor; cracking; dielectric absorption; insulation resistance;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2014.004082
  • Filename
    6927329