• DocumentCode
    1429969
  • Title

    Alpha-particle-induced effects in partially depleted silicon on insulator device: With and without body contact

  • Author

    Rathod, S.S. ; Saxena, Alok Kumar ; Dasgupta, S.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Indian Inst. of Technol., Roorkee, India
  • Volume
    5
  • Issue
    1
  • fYear
    2011
  • fDate
    1/1/2011 12:00:00 AM
  • Firstpage
    52
  • Lastpage
    58
  • Abstract
    With the continuous downscaling of CMOS technologies, reliability has become one of the major bottlenecks in the evolution of next generation systems. The radiation-induced soft errors have become one of the most important and challenging failure mechanisms in the modern semi-conductor devices. The authors present an in-depth analysis of alpha-particle-induced effects in deep submicron partially depleted silicon on insulator (PD-SOI) device. Device with body contact as well as device without body contact is analysed. The process and device simulations are done with the latest models. Electrical parameter extraction under different energies of an alpha particle is carried out.
  • Keywords
    CMOS integrated circuits; alpha-particle effects; failure analysis; semiconductor device reliability; semiconductor process modelling; silicon-on-insulator; CMOS technology; PD-SOI device; alpha-particle-induced effects; deep submicron partially depleted silicon on insulator device; device simulations; electrical parameter extraction; failure mechanisms; in-depth analysis; next generation systems; process simulation; radiation-induced soft errors; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2010.0080
  • Filename
    5692796