DocumentCode :
1430290
Title :
A 3–5-GHz UWB Front-End for Low-Data Rate WPANs in 90-nm CMOS
Author :
Cavallaro, Marco ; Sapone, Giuseppina ; Giarrizzo, Guido ; Italia, Alessandro ; Palmisano, Giuseppe
Author_Institution :
Dipt. di Ing. Elettr. Elettron. e dei Sist., Univ. di Catania, Catania, Italy
Volume :
58
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
854
Lastpage :
865
Abstract :
A 3-5-GHz ultra-wideband front-end for low-data rate wireless personal area networks is presented in this paper. The circuit, fabricated in a 90-nm CMOS technology, includes a Gaussian-envelope carrier-based transmitter, a direct-conversion down-converter, and an LO frequency synthesizer. A highly accurate Gaussian pulse shape is achieved by using a nonlinear pulse-forming approach, which provides a spectral efficiency of 38%. Moreover, a side-lobe rejection higher than 27 dB is reached without external filters. The transmitter achieves a peak pulse repetition frequency of 500 MHz supporting both pulse-position modulation and binary phase-shift-keying modulation schemes. It includes a baseband digital modulator, which implements spreading and time-hopping functions, and can be easily programmed to support different data rates, mean pulse repetition frequencies, and modulation timing parameters. The down-converter exploits a single-ended low-noise amplifier to avoid the off-chip wideband balun and minimize power consumption. It provides a 29-dB conversion gain and 5.2-dB noise figure while drawing only 8 mA. Operating from a 1.2-V supply, the overall front-end dissipates 42 pJ/pulse in RX mode and 56 pJ/pulse in TX mode.
Keywords :
CMOS integrated circuits; baluns; frequency synthesizers; low noise amplifiers; personal area networks; phase shift keying; pulse position modulation; radio networks; spectral analysis; ultra wideband communication; CMOS technology; Gaussian pulse shape; Gaussian-envelope carrier-based transmitter; LO frequency synthesizer; UWB front-end; binary phase-shift-keying modulation; current 8 mA; digital modulator; direct-conversion down-converter; frequency 3 GHz to 5 GHz; gain 29 dB; low-data rate WPAN; modulation timing parameters; noise figure 5.2 dB; nonlinear pulse-forming approach; off-chip wideband balun; power consumption; pulse repetition frequencies; pulse-position modulation; single-ended low-noise amplifier; size 90 nm; time-hopping functions; ultra-wideband communication; voltage 1.2 V; wireless personal area networks; CMOS integrated circuits; UWB pulse generators; low-power circuits; transceivers; ultra-wideband (UWB); wireless personal area networks (WPANs);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2010.2042653
Filename :
5422904
Link To Document :
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