Title :
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
Author :
Xu, Jane J. ; Keller, Stacia ; Parish, Gia ; Heikman, Sten ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V, which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; microwave power amplifiers; power HEMT; sapphire; substrates; thermal management (packaging); wideband amplifiers; 0.7 μm gate length; 0.7 mum; 20% power-added efficiency; 24 V; 3 to 10 GHz; 3-10 GHz bandwidth; 4 mm; 4 mm gate width; 7 dB; 8 W; 9.5 GHz; Al2O3; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; AlN circuit board; HEMT; LCR-matching networks; bias 24 V; circuit topology; flip-chip integrated broad-band power amplifier; four-way binary-Wilkinson combiner; output power 8 W; sapphire substrates; thermal management; Aluminum gallium nitride; Aluminum nitride; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Power amplifiers; Power generation; Printed circuits; Thermal management;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
