A new compact nonlinear model improvement methodology for GaN-HEMT

The analysis of the nonlinear charge bias dependence according to the input power, with respect to the intermodulation distortion (IMD) product for a GaN-HEMT, is presented. The results obtained from the analysis of the two-tone measurements, are used to determine the GaN-HEMT model deficiencies. An extrinsic non-linear capacitance element is added to improve the accuracy of the core compact model. The simplicity of the measurement procedure and data analysis, makes this a suitable methodology for a good non-linear characterization for GaN-HEMT. A comparison between simulated and experimental data is presented over a L_m = 08μm GaN-HEMT under different bias and input power conditions to validated the proposed model.