Title :
Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs
Author :
Park, Pil Sung ; Rajan, Siddharth
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.
Keywords :
III-V semiconductors; aluminium compounds; buffer circuits; gallium compounds; high electron mobility transistors; space-charge limited devices; wide band gap semiconductors; 2D potential distribution; AlGaN-GaN; drain-induced barrier lowering suppression; high electron mobility transistor; short-channel effect; space-charge-limited current; AlGaN/GaN high electron mobility transistor (HEMT); Ga-polar; N-polar; drain-induced barrier lowering (DIBL); short-channel effects; simulation; technology computer-aided design (TCAD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2099121
