Title :
Intensity noise and polarization stability of GaAlAs-GaAs surface emitting lasers
Author :
Koyama, Fumio ; Morito, Ken ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The intensity noise characteristics of GaAlAs-GaAs vertical cavity surface emitting (SE) lasers have been investigated. A low-intensity noise of -145 dB/Hz was obtained with an output power of 2.2 mW. The spontaneous emission factor is estimated to be 2×10-5, both from the bias dependence of the intensity noise and from the relative mode intensity below threshold. This is in good agreement with theoretical expectation. The possibility of low-noise operation of a microcavity SE laser with an extremely low output power of less than ~100 μW is shown. The polarization stability of the surface emitting laser is demonstrated by measuring the intensity fluctuations of an individual polarization state
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; laser cavity resonators; light polarisation; semiconductor junction lasers; 100 muW; 2.2 muW; GaAlAs-GaAs vertical cavity surface emitting lasers; III-V semiconductors; bias dependence; individual polarization state; intensity fluctuations; intensity noise characteristics; microcavity SE laser; output power; polarization stability; relative mode intensity; spontaneous emission factor; Laser modes; Laser noise; Laser stability; Laser theory; Microcavities; Polarization; Power generation; Spontaneous emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
