Title :
Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells
Author :
Chen, Ying-Chih ; Wang, P. ; Coleman, James J. ; Bour, David P. ; Lee, K.K. ; Waters, R.G.
Author_Institution :
Dept. of Phys. & Astron., Hunter Coll., City Univ. of New York, NY, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
The carrier recombination rates in semiconductor quantum wells are found to be structure dependent. Under high levels of excitation they generally do not follow the recombination rule of the bulk material. Through a differential carrier-lifetime measurement in the strained-layer InGaAs/GaAs quantum wells, it is shown that in quantum wells with lower potential barrier or thinner well width, the recombination rates are smaller due to a larger portion of the injected carriers populating the confinement layers where the carriers recombine more slowly owing to dilute carrier volume density
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; semiconductor quantum wells; III-V semiconductors; carrier recombination rates; confinement layers; differential carrier-lifetime measurement; dilute carrier volume density; injected carriers; potential barrier; semiconductor quantum wells; strained layer InGaAs-GaAs quantum wells; well width; Carrier confinement; Charge carrier density; Charge carrier lifetime; Composite materials; Laboratories; Lifetime estimation; Material storage; Radiative recombination; Semiconductor materials; Spontaneous emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
