DocumentCode :
143209
Title :
Characterization of fast-response and low-noise poly si uncooled far infrared sensor
Author :
Neli, R.R. ; Doi, I. ; Diniz, Jose A.
Author_Institution :
Fed. Univ. of Technol. - Parana (UTFPR), Campo Mourão, Brazil
fYear :
2014
fDate :
25-28 Feb. 2014
Firstpage :
1
Lastpage :
4
Abstract :
This work has as a main goal the characterization of thermal sensors, described as bolometer, which are dedicated to far infrared radiation detection. These sensors are fabricated using microfabrication techniques and the thin films are selective to wet etching. These mechanical microstructures are formed on silicon wafers using surface wet etching. As these structures are obtained using conventional techniques for integrated circuits manufacturing, it becomes possible perform monolithic integration of electronics and mechanical devices, allowing the integrated microsystems development. The porous gold or “gold black” used as a radiation absorber, showed absorption index greater than 80%.
Keywords :
bolometers; elemental semiconductors; etching; gold; infrared detectors; microfabrication; porous materials; silicon; thin films; Au; Si; absorption index; bolometer; far infrared radiation detection; fast-response far infrared sensor; gold black; integrated microsystems; low-noise far infrared sensor; mechanical microstructures; microfabrication; poly Si uncooled far infrared sensor; porous gold; radiation absorber; silicon wafers; surface wet etching; thermal sensors; thin films; Bolometers; Gold; Temperature measurement; Temperature sensors; Thermal conductivity; bolometer; far infrared; gold black; poly silicon; uncooled;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
Conference_Location :
Santiago
Print_ISBN :
978-1-4799-2506-3
Type :
conf
DOI :
10.1109/LASCAS.2014.6820276
Filename :
6820276
Link To Document :
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