Title :
Design and photoluminescence study on a multiquantum barrier
Author :
Takagi, Takeshi ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The structure of a multiquantum barrier (MQB) is discussed, and possible choices of well and barrier thickness and pair number for a visible AlGaInP laser in the 630 nm wavelength range are examined. Is it confirmed that an effective potential barrier can be two times as high as a classical potential barrier. The potential barrier height under biased conditions is shown to be larger than 50 meV, considering the variation of Fermi level changes in the MQB region. This may contribute to higher temperature CW operation when introduced into visible AlGaInP lasers. By photoluminescence (PL) measurement, the effect of electron-wave confinement of a GaAs/AlGaAs MQB is experimentally verified. A weak saturation in PL excitation power dependence and less sensitive temperature dependence were observed. These effects could be due to the increase in potential barrier height, and show a superior carrier confinement of MQB
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor junction lasers; semiconductor quantum wells; 630 nm; Fermi level changes; GaAs-AlGaAs; GaAs/AlGaAs MQB; III-V semiconductor; MQB; barrier thickness; biased conditions; carrier confinement; classical potential barrier; design; effective potential barrier; electron-wave confinement; excitation power dependence; higher temperature CW operation; multiquantum barrier; pair number; photoluminescence study; temperature dependence; visible AlGaInP laser; weak saturation; well thickness; Carrier confinement; Chemicals; Helium; Heterojunctions; Laser excitation; Metallic superlattices; Molecular beam epitaxial growth; Photoluminescence; Temperature dependence; Temperature sensors;
Journal_Title :
Quantum Electronics, IEEE Journal of
