DocumentCode :
1432598
Title :
Fully integrated low-power sige power amplifier for biomedical applications
Author :
Kaynak, Mehmet ; Tekin, Ibrahim ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul, Turkey
Volume :
5
Issue :
2
fYear :
2011
Firstpage :
214
Lastpage :
219
Abstract :
A full-integrated very low-power SiGe power amplifier (PA) is realised using the innovations for high performance, 0.25 μm SiGe process. The behaviour of the amplifiers has been optimised for the 2.1-2.4 GHz frequency band for a higher 1 dB compression point and high efficiency at a lower supply voltage. The PA delivers an output power of 3.75 and 1.25 mW for 2 and 1 V, respectively. The PA measurements yielded the following parameters: gain of 13 dB, 1 dB compression point of 5.7 dBm, and power added efficiency of 30% for 2 V supply voltage. The PA circuit can go down to 1 V of supply voltage with a gain of 10 dB, 1 dB compression point of 1 dBm, and power added efficiency of 20%. For both supply voltages, the input and the output of the circuit give good reflection performance. With this performance, the PA circuit may be used for low-power biomedical implanted transceiver systems.
Keywords :
Ge-Si alloys; biomedical electronics; low-power electronics; power amplifiers; PA circuit; biomedical application; frequency 2.1 GHz to 2.4 GHz; gain 10 dB; low-power SiGe power amplifier; power 1.25 mW; power 3.75 mW; size 0.25 micron; voltage 1 V; voltage 2 V;
fLanguage :
English
Journal_Title :
Microwaves, Antennas & Propagation, IET
Publisher :
iet
ISSN :
1751-8725
Type :
jour
DOI :
10.1049/iet-map.2009.0437
Filename :
5697299
Link To Document :
بازگشت