Title :
Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes
Author :
Onishi, Toshikazu ; Adachi, Hideto ; Kidoguchi, Isao ; Mkannoh, M. ; Takamori, Akira ; Narukawa, Yukio ; Kawakami, Yoichi ; Fujita, Shigeo
Author_Institution :
Discrete Device Div., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
On AlGaInP laser diodes, the doping level and type of GaInP saturable absorbing (SA) layers suitable for self sustained pulsation are clarified. Optical properties of n- and p-type GaInP quantum wells (QWs) have been evaluated by means of time-resolved photoluminescence (TRPL) spectroscopy. As the doping level becomes higher, the recombination lifetime becomes shorter, and it can be reduced to 1.1 ns at our highest doping level (1=2/spl times/10/sup 18/ cm/sup -3/). For highly doped n-type QW, a PL peak energy shift as large as 26 meV is observed by high-density excitation. Highly doped p-type SA layer is suitable for self-sustained pulsating laser diodes, because it offers short recombination lifetime and no Burstein shift under highly excited condition.
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium compounds; indium compounds; laser transitions; optical saturable absorption; photoluminescence; quantum well lasers; semiconductor doping; time resolved spectroscopy; 1.1 ns; 26 meV; 650 nm; AlGaInP; GaInP; GaInP quantum wells; GalnP saturable absorbing layers; PL peak energy shift; doping level; high-density excitation; highly doped n-type QW; highly excited condition; pulsed AIGaInP laser diodes; recombination lifetime; self sustained pulsation; short recombination lifetime; time-resolved photoluminescence spectroscopy; Diode lasers; Doping; Epitaxial growth; Laser excitation; Optical feedback; Optical noise; Photoluminescence; Radiative recombination; Spectroscopy; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
