Lasing characteristics of 1.5 μm GaInAsP-InP SCH-BIG-DR lasers

Author

Shim, Jong-In ; Komori, Kazuhiro ; Arai, Shigehisa ; Arima, Isao ; Suematsu, Yasuharu ; Somchai, Ratanathammaphan

Author_Institution

Dept. of Phys. Electron. Tokyo Inst. of Technol., Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1736

Lastpage

1745

Abstract

Higher differential quantum efficiency η_df, smaller chirp Δλ, narrower linewidth Δν, and high coupling efficiency C_out between active and passive regions of 1.5 μm GaInAsP-InP SCH-BIG-DR lasers with a thin active layer and asymmetric gratings were experimentally demonstrated by a comparison of those properties of distributed feedback (DFB) lasers from the same wafer. A submode suppression ratio (SMSR) of more than 39 dB at 1.7 times the threshold current and a C_out of almost 100% in the SCH-BIG-DR lasers indicated that a separate-confinement-heterostructure (SCH) with a thin active layer and a bundle-integrated-guide (BIG) structure are quite adequate to realize high-performance distributed reflector (DR)-type lasers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; semiconductor junction lasers; 1.5 micron; GaInAsP-InP; III-V semiconductors; asymmetric gratings; bundle-integrated-guide; chirp; coupling efficiency; differential quantum efficiency; distributed feedback lasers; distributed reflector lasers; lasing characteristics; linewidth; passive regions; separate-confinement-heterostructure; submode suppression ratio; thin active layer; Chirp; Degradation; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Laser theory; Light sources; Mirrors; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89999

Filename

89999