High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers

Author

Kazmierski, Christophe ; Ougazzaden, Abdallah ; Blez, Monique ; Robein, Didier ; Landreau, Jean ; Sermage, Bernard ; Bouley, Jean Claude ; Mircea, A.

Author_Institution

CNET, Lannion, France

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1794

Lastpage

1797

Abstract

The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement heterostructure (SCH) MQW layer stack, and the buried ridge stripe (BRS) structure, improved static performances over any bulk or unstrained MQW long wavelength laser were obtained. An extremely low threshold below 2 mA was obtained in short cavity lasers, the threshold current was only 10.6 mA and 110 mW continuous-wave (CW) maximum optical power was observed using 90%/10% reflectivity coatings

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 10.6 mA; 110 mW; GaInAs-GaInAsP; III-V semiconductors; MQW layer stack; buried heterostructure; buried ridge stripe lasers; continuous-wave; maximum optical power; metalorganic vapor phase epitaxy; multiquantum well; reflectivity coatings; separate confinement heterostructure; short cavity lasers; static performance; threshold current; Coatings; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical materials; Power lasers; Quantum well devices; Reflectivity; Threshold current; Ultraviolet sources;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.90006

Filename

90006