Title :
Silicon epitaxy at low temperature, using UV cleaning in a reduced pressure CVD system
Author :
Regolini, J.L. ; Bensahel, D. ; Nissim, Y.I. ; Mercier, J. ; Scheid, E. ; Perio, A. ; Andre, E.
Author_Institution :
CNET, Meylan, France
fDate :
3/31/1988 12:00:00 AM
Abstract :
Thin homoepitaxial silicon layers are grown in a reduced pressure (10-0.002 Torr), air cooled, horizontal CVD reactor, with a rapid thermal heating. A fast and efficient substrate cleaning at 800°C making use of irradiation of the substrate by deep UV radiation under hydrogen is reported
Keywords :
elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; surface treatment; vapour phase epitaxial growth; 0.002 to 10 torr; 800 degC; Si; UV cleaning; VPE; air cooling; deep UV radiation; homoepitaxial layers; horizontal CVD reactor; irradiation; low temperature; rapid thermal heating; reduced pressure CVD system; semiconductor epitaxial growth; substrate cleaning;
Journal_Title :
Electronics Letters
