DocumentCode
1435258
Title
Nonlinear modeling and design of bipolar transistors ultra-low phase-noise dielectric-resonator oscillators
Author
Regis, M. ; Llopis, O. ; Graffeuil, J.
Author_Institution
LAAS, CNRS, Toulouse, France
Volume
46
Issue
10
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
1589
Lastpage
1593
Abstract
This paper presents a design methodology for low phase-noise dielectric-resonator oscillators (DRO´s) with applications examples at 4 GHz. Different oscillators topologies are investigated and, finally, three oscillators´ configurations have been simulated, realized in discrete elements, and characterized. The best measured phase-noise magnitude is -133 dBc/Hz at 10-kHz offset frequency
Keywords
bipolar transistor circuits; circuit noise; dielectric resonator oscillators; microwave oscillators; phase noise; 4 GHz; bipolar transistor; design; dielectric resonator oscillator; discrete element simulation; nonlinear model; phase noise; Bipolar transistors; Circuit simulation; Dielectrics; Frequency; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Noise measurement; Phase measurement; Phase noise;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.721171
Filename
721171
Link To Document