Title :
55 GHz dynamic frequency divider IC
Author :
Lao, Z. ; Thiede, A. ; Hornung, J. ; Schlechtweg, M. ; Lienhart, H. ; Bronner, W. ; Hülsmann, A. ; Jakobus, T. ; Seibel, J. ; Sedler, M. ; Kaufel, G.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
10/1/1998 12:00:00 AM
Abstract :
A divide-by-two dynamic frequency divider based on enhancement and depletion 0.2 μm gate length pseudomorphic AlGaAs/InGaAs HEMTs (fT=68 GHz and 60 GHz) was designed and fabricated. High-speed operation up to 55 GHz has been measured. The circuit is based on source-coupled FET logic and has single-ended input and complementary outputs to ground. The power consumption is 300 mW using two supply voltages of 4 and -2.5 V
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; -2.5 V; 0.2 micron; 300 mW; 4 V; 55 GHz; 60 GHz; 68 GHz; AlGaAs-InGaAs; complementary outputs; dynamic frequency divider; frequency divider IC; high-speed operation; power consumption; pseudomorphic HEMTs; single-ended input; source-coupled FET logic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981336
