Title :
Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors
Author :
Masson, P. ; Ghibaudo, G. ; Autran, J.L. ; Morfouli, P. ; Brini, J.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
10/1/1998 12:00:00 AM
Abstract :
The influence of the quadratic attenuation mobility factor on the low frequency 1/f noise in MOS transistors is investigated. By taking into account the correlated mobility fluctuations, the influence of the surface roughness scattering on the input referred noise under strong inversion is analysed. The quadratic attenuation mobility factor is found to reduce the impact of the mobility fluctuations on the normalised drain current noise
Keywords :
1/f noise; MOSFET; carrier mobility; semiconductor device noise; surface scattering; MOS transistor; drain current; low frequency 1/f noise; mobility fluctuations; quadratic attenuation mobility factor; quadratic mobility degradation factor; surface roughness scattering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981122
