DocumentCode
1437158
Title
High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
Author
Duez, V. ; Mélique, X. ; Vanvesien, O. ; Mounaix, P. ; Mollot, F. ; Lippens, D.
Author_Institution
IEMN, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume
34
Issue
19
fYear
1998
fDate
9/17/1998 12:00:00 AM
Firstpage
1860
Lastpage
1861
Abstract
The authors report a very high capacitance ratio of ~10:1:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode
Keywords
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; indium compounds; semiconductor quantum wells; varactors; GaAs-InGaAs-AlAs; III-V semiconductors; capacitance modulation; capacitance ratio; carrier dynamics; depletion operation mode; quantum well eigenstates; quantum well-barrier varactors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981328
Filename
722390
Link To Document