Title :
Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
Author :
Shoji, H. ; Nakata, Y. ; Mukai, K. ; Sugiyama, Y. ; Sugawara, M. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
10/10/1996 12:00:00 AM
Abstract :
Room temperature CW operation at the ground state has been achieved in self-formed InGaAs quantum dot lasers with a multi-stacked dot layer. By systematic investigation, discontinuous shifts of lasing wavelength from high-order sub-bands to the ground state are clearly demonstrated by varying the number of dot layers and the cavity loss
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; semiconductor quantum dots; InGaAs; cavity loss; ground state; high-order sub-bands; lasing wavelength shifts; multi-stacked dot layer; room temperature CW operation; self-formed quantum dot lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961339