Title :
Nonlinear electronic transport and device performance of HEMTs
Author :
Quay, Ruediger ; Hess, Karl ; Reuter, Ralf ; Schlechtweg, Michael ; Grave, Thomas ; Palankovski, Vassil ; Selberherr, Siegfried
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
2/1/2001 12:00:00 AM
Abstract :
We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss DC and RF performance issues for pseudomorphic AlGaAs-InGaAs-GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in two different foundries
Keywords :
equivalent circuits; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; thermionic emission; 150 nm; AlGaAs-InGaAs-GaAs; DC performance; III-V HEMTs; MINIMOS-NT; MODFET; PHEMTs; RF performance; device performance; device simulator; high electron mobility transistors; nonlinear electronic transport; pseudomorphic HEMTs; real space transfer; Circuit simulation; Consumer electronics; Equivalent circuits; Foundries; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Physics; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
