Title :
High quality interpoly-oxynitride grown by NH/sub 3/ nitridation and N/sub 2/O RTA treatment
Author :
Pan, Tung Ming ; Lei, Tan Fu ; Yang, Wen Luh ; Cheng, Chun Ming ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N/sub 2/O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Keywords :
EPROM; dielectric thin films; electron traps; flash memories; leakage currents; nitridation; rapid thermal annealing; semiconductor device breakdown; CVD; N/sub 2/O; NH/sub 3/; RTA treatment; charge to breakdown; electric breakdown field; electrical properties; electron trapping rate; flash memory devices; high density EEPROM; interpoly dielectric; interpoly-oxynitride growth; leakage current; nitridation; Chaos; EPROM; Electric breakdown; Electron traps; Flash memory; Leakage current; Nitrogen; Oxidation; Rapid thermal annealing; Rough surfaces;
Journal_Title :
Electron Device Letters, IEEE
