Title :
Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”
Author :
Hook, T.B. ; Johnson, J.B. ; Cathignol, A. ; Cros, A. ; Ghibaudo, Gerard
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
This correspondence briefly describes and reconciles two separate streams of work, which extend the Pelgrom model for a transistor mismatch. While independently conceived and pursued, similar and complementary conclusions have been reported by these groups, refining the understanding of a transistor mismatch to encompass halo-dominated transistor designs.
Keywords :
MOSFET; analogue integrated circuits; HKMG technology; MOSFET; Pelgrom model; analog integrated circuits; channel length; halo-dominated transistor designs; size 32 mm; threshold voltage dependence; transistor mismatch; Doping; Implants; Integrated circuit modeling; MOSFETs; Semiconductor process modeling; Threshold voltage; Analog integrated circuits; MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2104962
