Title :
Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power
Author :
Saarinen, M. ; Vilokkinen, V. ; Dumitrescu, M. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
Monolithic resonant cavity light-emitting diodes exhibiting an external quantum efficiency (/spl eta//sub ex/) up to 6.5% for 84-μm size devices at a wavelength at 655 nm have been demonstrated. Larger diodes, 150-300 μm in diameter, have the maximum /spl eta//sub ex/ between 5.5% and 4.9% and launch power output up to 8 mW.
Keywords :
cavity resonators; light emitting diodes; molecular beam epitaxial growth; optical fabrication; optical resonators; 150 to 300 mum; 5.5 to 4.9 percent; 6.5 percent; 655 nm; 84 mum; external quantum efficiency; launch power output; light power; light-emitting diodes; monolithic resonant cavity light-emitting diodes; resonant-cavity light-emitting diodes; wavelength; Carrier confinement; Distributed Bragg reflectors; Light emitting diodes; Molecular beam epitaxial growth; Optical sensors; Rapid thermal processing; Reflectivity; Resonance; Stimulated emission; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
