Title :
Geometry effects on the electronic properties of multi-open dots structures
Author :
Fagotto, E.A.M. ; Rossi, M. ; Moschim, E.
Author_Institution :
Sch. of Electr. & Comput. Eng., State Univ. of Campinas, Brazil
fDate :
11/1/1998 12:00:00 AM
Abstract :
In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even small changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises
Keywords :
localised states; semiconductor quantum dots; Fano resonance; electronic properties; extended states; geometry effects; localized states; multi-open dots structures; Brazil Council; Eigenvalues and eigenfunctions; Fluctuations; Geometry; Impurities; Particle scattering; Quantum dots; Reservoirs; Resonance; US Department of Transportation;
Journal_Title :
Electron Devices, IEEE Transactions on
