A simple technique to measure generation lifetime in partially depleted SOI MOSFETs

Author

Shin, Hyungcheol ; Racanelli, M. ; Huang, W.M. ; Foerstner, J. ; Choi, Seokjin ; Schroder, D.K.

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

45

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

2378

Lastpage

2380

Abstract

This work presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI) MOSFETs. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished SIMOX (Separation by IMplantation of OXygen) wafers and BESOI (Bonded and Etchedback SOI) wafers. BESOI material evaluated in this study had about seven times longer effective generation lifetime than SIMOX material and both the SIMOX and the BESOI are shown to have a lifetime variation of ±10% across four inch wafers

Keywords

MOSFET; SIMOX; carrier lifetime; semiconductor device testing; BESOI material; MOSFET subthreshold current; SIMOX wafers; Si; bonded/etchedback SOI; generation lifetime; partially depleted SOI MOSFET; transient characteristics; Aluminum; Density measurement; Electrical resistance measurement; MOSFET circuits; Noise measurement; Pulse measurements; Semiconductor device noise; Silicon on insulator technology; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.726663

Filename

726663