• DocumentCode
    1440945
  • Title

    1.4 MHz radio frequency metal-base transistor using single emitter layer

  • Author

    Yusoff, A.R.B. ; da Sillva, W.J. ; Song, Yuning ; Holz, E. ; Schulz, Dirk ; Shuib, S.A.

  • Author_Institution
    Dept. de Fis., Group of Org. Optoelectron. Devices, Univ. Fed. do Parana, Curitiba, Brazil
  • Volume
    48
  • Issue
    3
  • fYear
    2012
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    A report is presented on a study of single emitter layer metal base transistors with a base terminal made of aluminium grids. The latter exhibits low operating voltage associated to the high resistivity of the collector terminal and also shows very low leakage current. With such a single emitter layer, common-emitter current gain, on/off current ratio, and cutoff frequency of, respectively, 239.62, 3.8×107, and 1.4 MHz, were obtained.
  • Keywords
    leakage currents; low-power electronics; transistors; aluminium grid; collector terminal; common-emitter current gain; frequency 1.4 MHz; leakage current; low operating voltage; radio frequency metal-base transistor; single emitter layer; single emitter layer metal base transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3235
  • Filename
    6145824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1440945