Title :
Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation
Author :
Schweiger, K. ; Hofbauer, Michael ; Dietrich, H. ; Zimmermann, Horst ; Voss, K.O. ; Merk, B.
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Abstract :
A CMOS inverter in 90 nm CMOS bulk technology was exposed to heavy ion radiation (Au-197) at a micro-beam facility. The targeted inverter occupies an area of 6 3 m2. The resulting single event transient (SET) voltage pulses at the output were measured using an on-chip analogue sense amplifier. The output of the amplifier was recorded with a 15 GHz real-time oscilloscope. Depending on the location of the ion hits strongly different pulse shapes were observed.
Keywords :
CMOS logic circuits; amplifiers; analogue circuits; ion beam effects; logic gates; CMOS bulk technology; CMOS inverter; frequency 15 GHz; heavy ion irradiation; micro-beam facility; on-chip analogue sense amplifier; position dependent measurement; real-time oscilloscope; single event transient voltage pulse shape; size 90 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3767
