DocumentCode :
1441156
Title :
Nondegeneracy Conditions for Active Memristive Circuits
Author :
Riaza, Ricardo
Author_Institution :
Dept. de Mat. Aplic. a las Tecnol. de la Inf., Univ. Politec. de Madrid, Madrid, Spain
Volume :
57
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
223
Lastpage :
227
Abstract :
This brief presents a characterization of nondegenerate circuits with active memristors, i.e., memristors with a negative memductance at certain operating ranges. The analysis proceeds by characterizing index-one configurations in several differential-algebraic models of active memristive circuits. We apply tree-based techniques to the analysis of nodal analysis models and then extend this approach to branch-oriented systems. Some examples illustrate the scope of our results.
Keywords :
active networks; continuous time systems; differential algebraic equations; nanoelectronics; resistors; active memristive circuits; branch-oriented systems; differential-algebraic models; memductance; memristors; nodal analysis models; nondegeneracy conditions; tree-based techniques; Active networks; continuous-time systems; memristors; nonlinear circuits; trees;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2010.2041816
Filename :
5431056
Link To Document :
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