DocumentCode :
1441209
Title :
Fabrication of 
–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process
Author :
Rajagopal, Rajashree ; Kale, S.N. ; Raorane, N.A. ; Pinto, R. ; Rao, Valipe Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
402
Lastpage :
404
Abstract :
We report La0.7Sr0.3MnO3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics.
Keywords :
CMOS integrated circuits; X-ray chemical analysis; etching; lanthanum compounds; magnetoelectronics; manganese compounds; p-n heterojunctions; silicon; strontium compounds; CMOS-compatible citric acid etch process; La0.7Sr0.3MnO3-Si; energy-dispersive X-ray analysis; p-n-junction device fabrication; profilometer measurements; step height; superconducting quantum interferometry device magnetometry; Dielectrics; Fabrication; Resists; Silicon; Substrates; Surface treatment; Citric acid etch; magnetoelectronic devices; manganite heterojunctions; silicon technology;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2102331
Filename :
5706349
Link To Document :
